Final Program

Monday, January 19, 2009

7:00 Registration and Continental Breakfast

8:00 "MTT Wireless Week" Plenary – Introduction and Welcome

9:50 Break

10:20 – 12:00 Session 1: Class-E Amplifiers
Introduction and Welcome by John Wood, Symposium Chair

10:30 1.1 "High Efficiency RF & Microwave Power Amplifiers” (Invited) Andrei Grebennikov Alcatel/Bell Labs Ireland

11:00 1.2 “Class E broadband amplifier with C-LC shunt network” Arturo Mediano, Kumar Narendra, and Chacko Prakash University of Zaragoza, Spain & Motorola Technology, Penang, Malaysia

11:20 1.3 “A New Inverse Class E Power Amplifier Topology” Jukka Typpö, Morten Olavsbråten Norwegian University of Science and Technology

11:40 1.4 “High-Efficiency Transmitter for Magnetic-Resonance Imaging” Frederick H. Raab, Martin C. Poppe III, and Daniel P. Myer Green Mountain Radio Research; Cambridge Engineering; Communication Power

12:00 Lunch

1:30–3:20 Interactive Forum – Poster Session

P1 A Fast Digital Adaptive Predistortion and Loop-Delay Compensation Algorithm for RF Power Amplifier Linearization Hao Li, Dae Hyun Kwon, and Yun Chiu,

University of Illinois at Urbana-Champaign, Urbana, IL & University of Science and Technology of China, Hefei, Anhui, China

P2 "A CMOS Power Amplifier for WCDMA/GSM Handset Applications" Bonhoon Koo and Songcheol Hong,

Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea

P3 "A Full FPGA-based Implementation of an Adaptive Digital Predistorter"

P.L. Gilabert, G. Montoro and E. Bertran,

Universitat Politècnica de Catalunya (UPC), Barcelona, Spain

P4 "“Vector Hole” Punching of OFDM Signals for Polar Transmitters" Jingqi Wang, Anding Zhu, Xiaowei Zhu, and Thomas J. Brazil,

Southeast University, Nanjing, China & University College Dublin, Ireland

P5 "Low Latency Phase Shifting for Wideband Feed-Forward Amplifier” Bernhart Pelger-Alzner, Gerald Ulbricht, Christopher Laske

Fraunhofer Institute for Integrated Circuits, Erlangen, Germany

P6 “Impact of the Gate Layout on the Performance of RF Power nLDMOSFETs integrated in a 0.13-μm CMOS Technology”

D. Fournier, D. Ducatteau, E. Delos, M. Buczko, P. Scheer, D. Gloria, C. Gaquière & P. Chevalier

STMicroelectronics, Crolles, France & IEMN-DHS, UMR CNRS, Villeneuve d’Ascq, France

P7 "A Silicon Technology Platform for Wireless Communications Front-End Modules”

V. Blaschke, M. Elbaz, J. Zheng, X. Luo, R. Zwingman, S. Chaudhry and M. Racanelli

Jazz Semiconductor, Newport Beach, CA

P8 "Compensation of PA non-linearity in OWSS WLAN systemsDinesh Divakaran and Wilfrido Moreno

University of South Florida, Tampa, FL

P9 "Wideband Class-E GaN HEMT High Power Amplifier at L-band” Koji Yamanaka, Hiromitsu Uchida, Akira Inoue, Kazutomi Mori, and Moriyasu Miyazaki

Mitsubishi Electric Corporation, Kamakura, Japan

3:20 Coffee break

3:50–5:10 Session 2: Envelope Elimination and Restoration

3:50 2.1 “Evaluation of High Efficiency PAs for Use in Supply- and Load-modulation Transmitters” Christian Fager, Hossein M. Nemati, Ulf Gustavsson, Rik Jos, and Herbert Zirath Chalmers University of Technology, Sweden; Ericsson AB, Sweden; NXP Semiconductors, The Netherlands

4:10 2.2 “OptimalPAE Polar Split for Efficient and Linear Drain Modulated Power

AmplifiersJohn Hoversten, Mark Norris, Zoya Popovic, and Dragan Maksimovic

University of Colorado at Boulder Department of Electrical Engineering

4:30 2.3 “Harmonic Optimization of RF Power Amplifiers for Envelope Tracking WCDMA Base-station Applications”

J. Jeong, D. Kimball, M. Kwak, C. Hsia, P. Draxler and P. M. Asbeck

University of California, San Diego, La Jolla, CA

4:50 2.4 “Operation of Envelope Tracking Base-Station Amplifiers Under Average-Power Back-Off”

J. J. Yan, P. Draxler, D. Kimball, P.Asbeck, and C. Steinbeiser

UCSD, La Jolla, CA; Qualcomm, Inc., San Diego, CA; TriQuint Semiconductor, Richardson, TX

6:00 RWS Reception

7:00 PA Symposium Banquet (Lou & Mickey’s – Tickets Required)

Tuesday, January 20, 2009

8:00–9:30 Session 3: Predistortion

8:00 Announcements

8:10 3.1 “Crest Factor Reduction (CFR) for Down-link LTE by Transmitting Phase Shifted Resource Blocks”

R. Neil Braithwaite

Powerwave Technologies, Santa Ana, CA

8:30 3.2 “A Testbench for Analysis of Bias Network Effects in an RF Power Amplifier with DPD” Marius Ubostad and Morten Olavsbr°aten Norwegian University of Science and Technology (NTNU)

8:50 3.3 “On the Predistortability of High Efficiency Multi-carrier Power Amplifiers for Wireless Communication Infrastructure” Oualid Hammi, Scott Carichner, Bill Vassilakis, and Fadhel M. Ghannouchi University of Calgary, Calgary, Canada & Powerwave Technologies , Santa Ana, CA

9:10 3.4 “Memory Effects Measure for Improved Digital Predistortion Tuning” Michael LeFevre and David W. Runton RFMD, Chandler AZ

9:50 Break 10:20–12:00 Session 4: CMOS PAs and Technology

10.20 4.1 "Prospects of SOS Technology for Power Amplifier Applications" (Invited)

D. Kelly

Peregrine Semiconductor, San Diego, CA

10.50 4.2 “A 900 MHz Digital Polar Power Amplifier Implemented in SOI CMOS”

S. Pornpromlikit, J. Jeong, C. D. Presti, A. Scuderi, and P. M. Asbeck

University of California, San Diego, La Jolla, CA; Kwangwoon University, Seoul, Korea; Università di Catania, Catania, Italia; & STMicroelectronics Catania, Italia

11.10 4.3 “Opportunity and Perspectives of using Advanced High Resistivity SOI CMOS technology for the Integration of Multi-Standard RF Front-End Module”

F. Gianesello, A. Giry, O. Richard, O. Bon, S. Boret, F. Blanchet, L. Boissonnet,

P. Touret, A. Cathelin, D. Belot, D. Gloria, B. Rauber, C. Raynaud and O. Noblanc

STMicroelectronics, Crolles, CEA LETI, Grenoble

11.30 4.4 "60GHz CMOS Differential and Transformer-Coupled Power Amplifier for Compact Design" (Invited)

T. LaRocca and M.F. Chang

University of California, Los Angeles, Los Angeles, CA

12:00 Lunch

1:30 – 3:00 Session 5: GaAs Power Amplifiers for Handsets and Base-Stations

1.30 6.1 "HV-HBT devices and PAs" (Invited)

C. Steinbeiser

TriQuint Semiconductor, Richardson, TX

1.50 6.2 "A 2 mm x 2 mm HoP-type Power Amplifier for W-CDMA Handset Applications” Changhyun Yoo, Unha Kim, Youngwoo Kwon, and Junghyun Kim Hanyang University, Ansan, Korea & Seoul National University, Seoul, Korea

2.10 6.3 "A New LINC Architecture with Efficiency Enhancement for OFDM Signal Yonghoon Song, Sungho Lee, Jaejun Lee, and Sangwook Nam Seoul National University, Seoul, Korea

2.30 6.4 InGaP HBT Push-Pull PA Using a Transformer on an Advanced Multilayer Packaging Technology” Ali Tombak and Michael Zybura RFMD Inc., Greensboro, NC

3:00 Break

3:50-5:10 Session 6: Devices and Modeling

3.50 5.1 “Characterization of Drain-to-Source Nonlinear Capacitor for IMD” Senad Bulja and Dariush Mirshekar-Syahkal University of Essex, Colchester, UK

4.10 5.2 “Proper balun structures for microwave current mode class-D switching-mode power amplifiers” Pouya Aflaki, Renato Negra and Fadhel M. Ghannouchi University of Calgary, Alberta, Canada & RWTH Aachen University, Aachen, Germany

4.30 5.3 “Monolithic lumped-element unequal branch-line coupler for the use in asymmetrical Doherty amplifiers” Renato Negra, Fadhel Ghannouchi and Werner Bächtold ETH Zurich, Zurich, Switzerland; University of Calgary, Calgary, Alberta, Canada; RWTH Aachen University, Aachen, Germany

4.50 5.4 “Layout-Optimization of GaN-Chips”

F. Vanaverbeke, J. Das, H. Oprins, J. Derluyn, M. Germain, W. De Raedt

IMEC, Belgium

5:20 Conclusion of Symposium