Session 1:
Plenary
1.1 Plenary Speaker: Frederick H. Raab
(Green Mountain Radio Research Co., Colchester, Vermont
Transmitter Architectures for
High-Efficiency Applications
1.2 Invited Talk: Leo De Vreede
(Delft University of Technology, Delft, The Netherlands)
Linearization Techniques for Power Amplifiers at the Device and Circuit Level
1.3 Invited Talk: Bumman Kim and Jongchan Kang
(Pohang University of Science and Technology, Pohang, Korea)
Postech Activities on CMOS-Based Linear Power Amplifiers
Session 2:
Amplifiers for Basestation Applications
2.1 W. Bella and J-C. Nanan
(Freescale Semiconducteurs,
2-stage 200W
Doherty Amplifier for WCDMA Applications
2.2 P. Peyrot and J-J. Bouny
(Freescale Semiconducteurs,
A 200W LDMOS Doherty Amplifier
Designed at the
2.3 M.LeFevre, D. Runton, J. Kinney, J. Wright, J-C. Nanan, and J-J. Bounty
(Freescale Semiconductor,
Digital Pre-Distortion
Application of an LDMOS 200W Doherty Amplifier
2.4 I.H. Hwang,
J.Y. Kim, J.H. Kim, K.J. Cho and S.P. Stapleton
(Kwangwoon U,
Efficiency Extension of a High Power Doherty Amplifier Using Unequal Power Devices
2.5 D. Kimball, J. Jeong, C. Hsia, P. Draxler, P.M. Asbeck, D. Choi, W. Pribble and R. Pengelly
(UCSD, San Diego, CA, Qualcomm, San Diego, CA, Nokia, San Diego,CA and Cree Inc., Durham, NC)
Application of GaN Class E Amplifiers in EER/ET Amplifier Systems
Poster Session
P-1 X. Monroval and G. Bouisse
(Freescale Semiconductor,
A
New Generation of High Power LDMOS RFICs for 2GHz
Cellular Applications
P-2 Y-S.
Jeon, J. Cha,
(
High-Efficiency
Power Amplifier Using Novel High Speed Bias Switching
P-3 T. Kato, K. Yamaguchi and Y. Kuriyama
(Toshiba
Corp.,
A
4-mm-square Miniaturized Doherty PA Module for W-CDMA Mobile Terminals
P-4 V. Teppati, V. Camarchia, A.Ferrero, M. Pirola, and S.D. Guerrieri(Politecnico di Torino,
A
Comprehensive GaN HEMT Characterization for Power
Amplifier Design
P-5 G. Collins, B.Bakkaloglu, and S. Phillips
(ASU,
Robust
Compensation of Cartesian Loop Power Amplifier with Process Variability
P-6 P.N. Shastry and A.S. Ibrahim
(Bradley
U.,
Distributed Power Amplifiers: Output Power and Efficiency Considerations
P-7 D.H. Wisell
(Ericsson,
A
Step Towards a More General Behavioral Power Amplifier
Model
P-8 J. Andrews and J.D. Cressler
(Georgia
Tech,
On
the Optimal Use of Multiple Breakdown Voltage Devices in SiGe HBT Power Amplifiers
P-9
(
Reduction
of PAPR for OFDM Signals using Tone Reservation with Gaussian Pulses
P-10 B. Noori, J. Wood, M. Guyonnet, J. Pla, P. Hart, J. Jones, and P. Aaen
(Freescale Semicondutor, Tempe,
AZ)
Load-Pull
Measurements using Realistic Signal Conditions
P-11 D. Lee, Y. Kim,
C. Park, J. Han, S. Jeon, J. Park and S. Hong
(KAIST,
    Differential HBT
Power Cell and its Model Parameter Extractions
P-12 C. Park, Y. Kim, J. Han, D. Lee, D. Baek, and S. Hong
(KAIST,
A
P-13 J. Jeong, and Y.E. Wang
(UCLA,
A
Switching Mode Power Amplifier for Envelope Delta-Sigma Modulation (EDSM)
P-14 A. Ahmed, B. Bunz, E. Srinidhi and G. Kompa
(U
of
Effect of the Short Envelope Termination on the Measured Memory Effect in GaN HEMT Power Device
P-15 Y. Zhao, A. Metzger, P. Zampardi and P.M. Asbeck
(UCSD,
An
Analytical Model of Distortion in Doherty Amplifiers Implemented with HBTs
P-16 T. O'Sullivan and P.M. Asbeck
(UCSD,
A
Dual Mode Branchline Coupler for Reconfigurable Power Amplifiers
P-17 M.Y. Li,
(UCSD,
Error
Vector Magnitude Estimation with Correlation Techniques
P-18 J. Rode, T. Hung, and P.M. Asbeck
(UCSD,
Multilevel
Delta-Sigma-Based Switching Power Amplifiers Systems
Session 3: Advanced Device Technologies for Power Amplifiers
3.1 S.M. Wood, D.E. Hoekstra, R.S. Pengelly and W. L. Pribble
(Cree, Inc.,
A High Linearity, High Efficiency WiMax Power Amplifier using SiC MESFETs
3.2 W. Nagy, S. Singhal, J.W. Johnson, R. Therrien, A. Chaudhari, A.W. Hanson, J. Riddle, J. Marquart, and K.J. Linthicum
(Nitronex Corp.,
Enabling High
Efficiency PA Architectures Using GaN-on-Si RF Power Transistors
3.3 N. Ui, K. Ebihara and S. Sano
(Eudyna Devices, Inc.,
High Power GaN HEMTs for WiMAX BTS
3.4 W.L. Pribble, J.M. Milligan, and R.S. Pengelly
(Cree Inc.,
High Efficiency Class-E
Amplifier Utilizing GaN HEMT Technology
3.5 A.G. Metzger,
P.J. Zampardi, R. Ramanathan,
and K. Weller
                        (Skyworks Solutions, Newbury Park,CA)
Drivers and Applications for an
InGaP/GaAs Merged HBT-FET (BiFET)
Technology
3.6 J.S. Walling and D.J. Allstot
(U
of Washington,
A 25dBm 35%
PAE, 7-12 GHz Power Amplifier Utilizing Techniques to Increase Optimal Load Impedance
Tuesday,
January 17
Session 4:
Technology for
4.1 A. Pallotta F. Pidala, L. Labate, and A. Moscatelli
(STMicroelectronics,
Quad-band GSM Power Amplifier by Optimized BCD RFLDMOS
4.2 O. Kuijken, K. Sulaksono, L. van den
Oever, R. Heeres, and L. de
Maaijer
(Philips
Semiconductors,
4.3 A. Scuderi, F. Carrara and G. Palmisano
(STMicroelectronics,
A
Gain-Boosted Silicon Bipolar Linear Power Amplifier for 802.11a Wireless LANs
4.4 P.J. Zampardi, M. Sun, L. Rushing, K. Nellis, K. Choi, J.C. Li and R. Welser
(Skyworks Solutions, Newbury Park, CA, UCSD, San Diego, CA and Kopin Corp., Taunton, MA)
Demonstration of a Low Vref PA Based on InGaAsN Technology
4.5 D. Qiao, D. Choi, Y. Zhao, D. Kelly, T. Hung, D. Kimball. M. Li, and P.M. Asbeck
(UCSD, San Diego, CA, Nokia, San Diego, CA and Peregrine Semiconductor, San Diego, CA)
Real-time Adaptation to Antenna Impedance Mismatch for CDMA Transceivers
Session 5:
Characterization and Linearization Techniques
5.1 N. Safari, J.P. Tanem and T. Roste
(NTNU,
A Fast
Block Based Scheme for Power Amplifier Characterization and Linearization with Experimental
Results
5.2 J. Xu and Q.J. Zhang
(Carleton
U,
Behavioral
Modeling of Power Amplifier Circuits with Short and Long Term Memory Effects Using Dynamic Neural Networks
5.3 P. Fedorenko and J.S.Kenney
(Georgia
Tech,
Measurement
of Relative Phase and Magnitude of Third Order IMD Components for Identification and Characterization of RF Power Amplifier Memory Effects
5.4 D.A. Bustos, and T. Eriksson
(Politecnico di Torino, Italy and Chalmers U of Tech, Gothenburg, Sweden)
Simulation
of RF Power Amplifier Models into a System-Level Communication Link
5.5 S. Boumaiza, T. Liu and F.M. Ghannouchi
(U of Calgary, Alberta, Canada, and Ecole Polytechnique, Montreal, Quebec, Canada)
Pre-Compensation
for the Long and Short-Term Memory Effects in RF Transmitters